Atomic arrangement at the AlN/SiC interface.
نویسندگان
چکیده
The lattice structure of the AlN/SiC interface has been studied in cross section by high-resolution transmission-electron microscopy. Lattice images show planar and crystallographically abrupt interfaces. The atomic arrangement at the plane of the interface is analyzed based on the image characteristics. Possible bonding configurations are discussed. Variations in local image contrast and interplanar separations are used to identify atomic bonding configurations consistent with the lattice images.
منابع مشابه
Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures
The AlN/SiC band discontinuities in zinc-blende ~110!, ~111!, and wurtzite ~0001! heterostructures were examined using the ab initio pseudopotential approach. At the nonpolar AlN/SiC~110! junction, we find a valence-band offset of 1.7 eV. At the polar heterojunctions the band alignment depends on the interface composition, and valence-band offsets as high as 2.5 eV are obtained for neutral inte...
متن کاملGrowth of Highly C-axis Oriented Aln Films on 3c-sic/si Substrate
For the first time, highly c-axis oriented heteroepitaxial AlN thin films have been successfully grown on epitaxial 3C-SiC films on Si (100) substrates. The AlN films deposited by the AC reactive magnetron sputtering at temperatures of approximately 300-450 °C were characterized using the scanning electron microscope (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and transmissio...
متن کاملSurfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates
Effects of gallium as a surfactant for the growth of AlN epilayers on SiC substrates by metal-organic chemical-vapour deposition have been studied. It was found that the use of gallium as a surfactant enables the growth of thick, crack-free AlN epilayers on SiC substrates. The photoluminescence and x-ray diffraction (XRD) analysis show that gallium surfactant can reduce some of the tensile stra...
متن کاملMBE growth of cubic AlN on 3C?SiC substrate
We present our recent results on the growth of cubic AlN (001) layers by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3C-SiC (001) substrate. For high-quality c-AlN layers reflection high-electron energy diffraction (RHEED) patterns in all azimuths show RHEED patterns of the cubic lattice, hexagonal reflections are absent. Highresolution X-ray diffraction (HRXRD) measuremen...
متن کاملInfluence of AlN buffer on electronic properties and dislocation microstructure of AlGaNÕGaN grown by molecular beam epitaxy on SiC
Electronic and structural properties of AlGaN/GaN heterostructures grown by molecular beam epitaxy on semi-insulating 4H–SiC substrates with and without an initial AlN nucleation layer are studied. Differences in microstructure were examined using scanning capacitance microscopy, which reveals negatively charged dislocations through capacitance variations, conductive atomic force microscopy, us...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review. B, Condensed matter
دوره 53 11 شماره
صفحات -
تاریخ انتشار 1996